gsib2520, gsib2540, gsib2560, gsib2580 www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 88646 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 single-phase single in-line bridge rectifiers features ? ul recognition file number e54214 ? thin single in-line package ? glass passivated chip junction ? high surge current capability ? high case dielectric strength of 2500 v rms ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial au tomation applications. mechanical data case: gsib-5s ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb without heatsink primary characteristics package gsib-5s i f(av) 25 a v rrm 200 v, 400 v, 600 v, 800 v i fsm 350 a i r 10 a v f at i f = 12.5 v 1.0 v t j max. 150 c diode variations in-line case style gsib-5s ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gsib2520 gsib2540 gsib2560 gsib2580 unit maximum repetitive peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified output current at t c = 98 c (1) i f(av) 25 a t a = 25 c (2) 3.5 peak forward surge current single sine-wave superimposed on rated load i fsm 350 a rating for fusing (t < 8.3 ms) i 2 t 500 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gsib2520 gsib2540 gsib2560 gsib2580 unit maximum instantaneous forward voltage drop per diode 12.5 a v f 1.00 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c i r 10 a t a = 125 c 350
gsib2520, gsib2540, gsib2560, gsib2580 www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 88646 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb without heatsink (3) recommended mounting position is to bolt down on heatsi nk with silicone therma l compound for maximum he at transfer with #6 scre w ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse char acteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gsib2520 gsib2540 gsib2560 gsib2580 unit typical thermal resistance r ? ja (1) 22 c/w r ? jc (2) 1.5 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode gsib2560-e3/45 7.0 45 20 tube 0 15 20 75 50 25 0 100 125 150 10 5 25 30 heatsink mo u nting, t c p.c.b. mo u nting, t a temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) 0 50 100 150 200 300 350 400 1 100 10 nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle 0.6 1.0 1.2 1.4 0.8 0.01 0.1 10 1 100 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 60 40 20 0 100 80 0.1 1 100 10 1000 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (a) t a = 125 c t a = 25 c
gsib2520, gsib2540, gsib2560, gsib2580 www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 88646 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance ? package outline dimensions in millimeters 10 1 100 1000 1 10 100 re v erse voltage (v) j u nction capaci tance (pf) 10 1 0.1 0.1 10 1 0.01 t - heating time (s) transient thermal impedance (c/w) 2.5 0.2 2.2 0.2 1 0.1 10 0.2 7.5 0.2 4 0.2 5 20 0.3 17 . 5 0.5 11 0.2 2.7 0.2 3.5 0.2 3.2 0.2 0.7 0.1 4.6 0.2 3.6 0.2 + 7.5 0.2 30 0.3 case style gsib-5s
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